Optical properties of a semiconductor in the exciton spectral region under exposure to a high-power pump pulse in the <Emphasis Type="Italic">M</Emphasis>-band region |
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| Authors: | P I Khadzhi L Yu Nad’kin |
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| Institution: | (1) Dniester State University, ul. Dvadtsat’ Pyatogo Oktyabrya 128, Tiraspol, MD 3300, Moldova;(2) Institute of Applied Physics, Academy of Sciences of Moldova, Academiei str. 5, Chisinau, MD 2800, Moldova |
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| Abstract: | The behavior of the dielectric susceptibility of a semiconductor is studied in the case where the exciton state is probed by weak-pulse photons in the presence of a high-power laser pulse in the region of the M band of CuCl luminescence. A pronounced Autler-Townes effect for the exciton transition is shown to occur. The absorption peak position is determined by the amplitude and frequency of the pump field. |
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