Fabrication and characterization of In2O3 nanowires |
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Authors: | L Dai XL Chen JK Jian M He T Zhou BQ Hu |
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Institution: | (1) Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100 080, P.R. China, CN |
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Abstract: | In2O3 nanowires were successfully fabricated through a simple gas-reaction route in argon atmosphere. These nanowires have diameters
ranging from 20 nm to 50 nm and lengths up to tens of micrometers. High-resolution transmission electron microscopy observations
and the electron-diffraction (ED) pattern reveal that the In2O3 nanowires are formed by the stacking of (2) planes along the 1] direction, which is parallel to the wire axis. A strong and wide ultraviolet (UV) emission band centered at around 392 nm
is observed for the first time in the room-temperature photoluminescence measurement in addition to the usual blue emission
(468 nm). Moreover, five discrete fine peaks (372 nm, 383 nm, 406 nm, 392 nm and 413 nm) are further identified in this broad
UV band.
Received: 10 April 2002 / Accepted: 12 April 2002 / Published online: 19 July 2002 |
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Keywords: | PACS: 81 10 Bk 81 05 Hd |
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