Esca studies of Ga,As, GaAs,Ga2O3, As2O3 and As2O5

The binding energies of Ga 3d, As 3d, Ga L₃M₄,₅M₄,₅ and O 1s in Ga, As, GaAs, Ga₂O₃, As₂O₃ and As₂O₅ are reevaluated by means of ESCA. The calibration lines of the C 1s and the Au 4f_{$\text{7}\text{2}$} gave different binding energies for the compound materials. In order to determine the absolute binding energies, the chemical shifts in Auger and photoelectron lines from a layered structure composed of thin layer oxide and substrate of a defined material were used. An energy calibration curve, E(Ga 3d) vs. ΔE(GA LMM - Ga 3d), was found to be useful for determination of binding energies in the material which contains gallium. In the case of the GaAs sample, both the chemical etching and the ion bombardment effects on the chemical structure of the GaAs surface are also discussed.