Comparison between atomic layer epitaxy grown and molecular beam epitaxy grown CdTe/MnTe superlattices: a structural and optical study |
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Authors: | F Kany JM Hartmann H Ulmer-Tuffigo H Mariette |
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Institution: | aCEA/CNRS Group ‘Microstructures de Semiconducteurs II–VI’ Département de Recherche Fondamentale sur la Matièere Condensée—CEA/Grenoble, 17 rue des martyrs, Grenoble Cedex 9, 38054, France;bCEA/CNRS Group ‘Microstructures de Semiconducteurs II–VI’, Laboratoire de Spectrométrie Physique, CNRS—Université Joseph Fourier, Saint Martin d'Héres, BP 87, 38402, France |
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Abstract: | Atomic layer epitaxy (ALE) is investigated for the growth of CdTe/MnTe superlattices. A systematic structural characterization (X-ray diffraction, transmission electron microscopy), together with a magneto-optical study (reflectivity and photoluminescence), demonstrate that: for MnTe ALE, all deposited Mn atoms are incorporated, so that no autoregulated growth mode can be obtained, in contrast with CdTe ALE, atomic layer epitaxy allows well-controlled CdTe/MnTe superlattices to be achieved but does not prevent the exchange between Cd and Mn atoms which occurs at the interfaces between CdTe and MnTe, as observed in CdTe/MnTe superlattices grown by conventional molecular beam epitaxy. |
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Keywords: | atomic layer epitaxy II– VI semiconductors |
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