| 多孔硅的电荷存贮特性与光电压滞后衰减 |
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| 引用本文： | 孙甲明 张吉英. 多孔硅的电荷存贮特性与光电压滞后衰减[J]. 发光学报, 1993, 14(2): 206-208 |
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| 作者姓名： | 孙甲明 张吉英 |
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| 作者单位： | 中国科学院长春物理研究所, 长春 130021 |
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| 摘 要： | 自从Canham[1]在1990年报道了多孔硅的光致发光以来,人们便开始了多孔硅的发光特性及其发光机理的研究[2,3].我们在获得多孔硅材料的基础上,曾首次报道了多孔硅光电压的滞后衰减现象[4].在本文中主要对如上实验结果进行了分析和探讨.
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| 关 键 词： | 多孔硅 电荷储存 光电压 衰减 |
| 收稿时间： | 1993-05-17 |
CHARGE STORAGE AND PHOTOVOLTAGE HYSTERETIC DECAY OF POROUS SILICON |
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| Sun Jiaming,Zhang Jiying,Shen Dezhen,Fan Xiwu. CHARGE STORAGE AND PHOTOVOLTAGE HYSTERETIC DECAY OF POROUS SILICON[J]. Chinese Journal of Luminescence, 1993, 14(2): 206-208 |
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| Authors: | Sun Jiaming Zhang Jiying Shen Dezhen Fan Xiwu |
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| Affiliation: | Changchun Institute of Physics, Academia Sinica, Changchun 130021 |
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| Abstract: | We have studied the photovoltage decay curve of porous silicon(PS)for the first time.The photovoltage decay curve is quiet different from that of single crystalline Si,the maximum of photovoltage is stronger than that of Si.The photovoltage decay curve of PS indicates that the photovoltage quickly appears after laser pulses,and then changes slowly with many small unstable peaks until a photovoltage pulse appears,the photo-voltage begins to decrease slowly only after the photovoltage pulse appears.This phenomenon is attributed to charge storage on PS surface and the charge exchanging between the interface states and crystalline Si substrate. |
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