Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film |
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| Authors: | Jung Yong Kim In Jae Chung Changhee Lee Young Chul Kim Jai Kyeong Kim Jae-Woong Yu |
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| Institution: | aDepartment of Chemical and Biomolecular Engineering, KAIST, 373-1 Kusong, Yusong, Taejon 305-701, Korea;bSchool of Electrical Engineering, Seoul National University, San 56-1, Shillim, Kwanak, Seoul 151-742, Korea;cSchool of Environment and Applied Chemistry, Kyung Hee University Yongin, Kyunggi-do 449–701, Korea;dOptoelectronic Materials Research Center, KIST, 39-1 Hawolgok, Seongbuk, Seoul 136-791, Korea |
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| Abstract: | N,N′-diphenylbutyl-3,4,9,10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (≈2 μm)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 × 10−4 cm2/V s and 1.1 × 10−4 cm2/V s under the electric field of 500 (V/cm)1/2, respectively. This result shows that this organic compound is a good candidate for an n-type conduction. |
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| Keywords: | Perylene diimide Mobility Time of flight n-type semiconductor |
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