颗粒膜厚度对表面传导电子发射的影响

制备了不同厚度下的C-Ti颗粒膜用作表面传导电子发射的阴极发射薄膜，研究了不同颗粒膜厚度对电子发射特性的影响。将所制备阴极器件加载不同电压幅值下的等幅三角波，对器件进行电形成，结果表明:颗粒膜厚度为69 nm的器件开启电压为32 V，在33 V时具有最大发射效率;颗粒膜厚度为855 nm的器件开启电压为15 V， 在23 V时发射效率最高;颗粒膜厚度为69 nm的器件所形成的电压范围和电子发射效率都明显高于颗粒膜厚度为855 nm的器件。

Influence of granular film thickness on surface-conduction electron emission

C-Ti granular films with different thickness were prepared, acting as the cathode emission film, to study the influence of granular film thickness on electron emission characteristics. When symmetric triangular wave voltages of different magnitudes are applied to the prepared cathode device, electrical formation is then carried out to the devices. It is shown that the turn-on voltage of the 69 nm-thick-film equipped device is 32 V, with the emission efficiency reaching its maximum at 33 V, while the turn-on voltage of the 855 nm-thick-film equipped device was 23 V, with the maximum emission efficiency appearing at 23 V. It is also illustrated that the 855 nm-thick-film device has a much wider voltage range and a much higher electron emission efficiency than the 69 nm-thick-film one.