基于光导开关及层叠Blumlein线的纳秒脉冲源

设计了一台层叠Blumlein线型脉冲功率源。该脉冲源以平板型Blumlein线为储能器件，使用4个GaAs光导开关作为脉冲形成开关，通过4级Blumlein线层叠结构以获得更高输出电压。分别使用10 mm及3 mm间隙光导开关进行实验，比较了PSpice电路仿真与实验结果。实验测试显示，10 mm开关充电23.5 kV时上升沿较大，可能的原因是偏置电场较低时开关导通时间较长。测试了不同工作电压下功率源的输出电压，结果显示：在10 mm间隙开关条件下，充电23.5 kV时，负载上得到了53 kV的高压脉冲输出；3 mm开关充电13.9 kV时输出电压39.4 kV，输出效率70%。实验结果表明, 随着工作场强的提高，电压输出效率呈现先下降后上升最终趋于饱和的趋势。

Nanosecond-pulsed power source based on photoconductive semiconductor switches and stacked Blumlein line

A nanosecond pulsed power source based on GaAs photoconductive semiconductor switches (PCSSs) and stacked Blumlein line was developed. The pulsed power source consists of four stages of plate Blumlein line, and high-density polyethylene is adopted for energy storage. The full-circuit PSpice model of the pulsed power source with actual circuit parameters was established. Two vertical PCSSs with electrode gaps being 3 mm and 10 mm wide were used. Simulation results and experimental results are given. The rise time of the 10 mm-gap switch at 23.5 kV in experiment is larger than that in simulation. A possible reason is that the transition time of the 10 mm-gap PCSS becomes larger at lower bias electric field. The experiments indicate that the output voltages are respectively up to 39.4 kV and 53 kV with charging voltages up to 13.9 kV for the 3 mm-gap PCSS and 23.5 kV for the 10 mm-gap PCSS. The voltage efficiency with the 3mm-gap PCSS in the above condition is up to 70%. In addition, the voltage efficiency drops firstly and then rises gradually to saturation as the bias enhances.