纳米多晶硅薄膜电阻压力和加速度多功能传感器（英）

基于纳米多晶硅薄膜电阻的多功能传感器由压力传感器和加速度传感器构成。纳米多晶硅薄膜电阻构成的两个惠斯通电桥结构分别设计在方形硅膜表面和悬臂梁根部。采用MEMS技术和CMOS工艺在〈100〉晶向单晶硅片上实现压力/加速度传感器芯片制作，利用内引线技术将芯片封装在一个印刷电路板（PCB）上。在室温下，工作电压为5.0 V时，实验结果给出压力传感器灵敏度(a=0)为1.0 mV/kPa，加速度传感器灵敏度(p=0)为0.92 mV/g，可实现外加压力和加速度的测量，具有较好的灵敏度特性且交叉干扰较弱。

Multifunction sensor for pressure and acceleration measurements based on nano-polysilicon thin film resistors

A multifunction sensor based on nano-polysilicon thin film resistors which consists of pressure sensor and acceleration sensor is described. The two Wheatstone bridges consisting of piezoresistors are designed on the surface of square silicon membrane and the root of cantilever beam, respectively. The chips of pressure and acceleration sensors are fabricated on silicon wafer with 〈100〉 orientation by micro-electromechanical system (MEMS) technology and complementary metal oxide semiconductor (CMOS) technology, and they are packaged on a printed circuit board (PCB) using wire bonding technology. The experiment results show that the sensitivities of the pressure sensor (a=0) and the acceleration sensor (p=0) are 1.0 mV/kPa and 0.92 mV/g at room temperature and operating voltage of 5.0 V, respectively. It indicates that the proposed sensor can achieve the measurement of applied pressure and acceleration, and has good sensitivity characteristics. Meanwhile the mutual interference of them is weak.