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Charge Carrier Dynamics in Zn-Doped Cuprates
Authors:H.-H. Klauss  W. Wagener  B. Büchner  M. Hücker  D. Mienert  W. Kopmann  M. Birke  H. Luetkens  D. Baabe  F.J. Litterst
Affiliation:(1) Institut für Metallphysik und Nukleare Festkörperphysik, Technische Universität Braunschweig, 38106 Braunschweig, Germany;(2) II. Physikalisches Institut, Universität zu Köln, 50937 Köln, Germany
Abstract:We have measured the static magnetic susceptibility, the resistivity and muon spin relaxation (mgr+SR) spectra of Zn and Sr doped La2CuO2. Our data show that non-magnetic Zn impurities lead to an increase of the Néel temperature TN in weakly hole doped compounds. This increase of TN correlates with an increase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of long range antiferromagnetic order in La2–xSrxCuO4.
Keywords:muon spin relaxation  resistivity  doping
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