A theoretical study of the Si-O bond in disiloxane and related molecules

Summary A comparison of semi-empirical (MNDO) and ab initio (GAUSSIAN) calculations for disiloxane and related molecules is given. The STO-3G^* basis set well reproduced the observed geometries of disiloxane (*), DZP, TZVP) gave much poorer agreement with the observed geometries.Comparison of the STO-3G^* and the STO-3G basis sets demonstrates the necessity of including d-orbitals on the silicon. However, the semi-empirical MNDO program gave, despite the absence of d-orbitals, a better approximation to the molecular geometry than the complex ab initio basis sets.Force field parameters have been calculated for k_SiOSi, k_OSiO, 0.089 and 0.73 mdyneÅ/rad², and the SiOSiO torsion which has a V₁ potential of –0.68 kcal/mol. In addition, the HSiOH torsion is shown to have a three-fold potential of 0.78 kcal/mol. These are profoundly different from the analogous carbon-oxygen force constants, demonstrating that C-O parameters cannot be transferred to the corresponding Si-O systems.