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TOF-SIMS 5 instrument sensitivity to matrix elements in GeSi Layers: Analysis based on recording of complex secondary ions |
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| Authors: | M N Drozdov Yu N Drozdov D N Lobanov A V Novikov and D V Yurasov |
| Abstract: | Ge x Si1 − x layers are investigated by means of secondary ion mass spectrometry (SIMS). Experimental results obtained with the use of a TOF-SIMS 5 instrument are presented. To surmount the so-called matrix effect, SIMS analysis is performed by using complex secondary ions: Ge2−, CsGe+, and Cs2Ge+. |
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