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Electrical conductivity of Th₃P₄-type EnLn₂S₄

Authors:	Mineo Sato Gin-Ya Adachi Jiro Shiokawa

Institution:	Department of Applied Chemistry, Faculty of Engineering, Osaka University, Yamadakami, Suita-shi, Osaka-fu, 565 Japan

Abstract:	Electrical conductivity measurements of Th₃P₄-type EuLn₂S₄ (Ln = LaGd) compounds have been made as functions of temperature and sulfur vapor pressure. These compounds are all p-type semiconductors, and their conductivities at room temperature have almost the same values for the specimens from EuLa₂S₄ to EuNd₂S₄ but increase on going from EnNd₂S₄ to EuGd₂S₄. In addition, the conductivity of EuGd₂S₄ is sensitive to sulfur vapor pressure and obeys the relationship $σ ∝ P^{16}_{S_{2}}$ . The mechanism of electrical transport in these compounds is discussed.

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