Formation of ultrathin iron silicide layers on the single-crystal silicon surface |
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Authors: | M. V. Gomoyunova D. E. Malygin I. I. Pronin |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | The solid-phase synthesis of iron silicides on the Si(100)2 × 1 surface with a 5-ML-thick iron film deposited at room temperature was studied by high-resolution photoelectron spectroscopy with the use of synchrotron radiation. Computer simulation of the measured Si 2p spectra revealed the formation of silicides in this system already under annealing at a temperature of 60°C. The process of formation consists in successive syntheses of three iron silicide phases, more specifically, monosilicide ε-FeSi, metastable disilicide γ-FeSi2, and disilicide β-FeSi2. The temperature ranges of existence of these phases were determined. Silicon was found to segregate on the γ-FeSi2 surface. |
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