砷掺杂的ZnO纳米线的发光特性

在GaAs基底上制备了高质量的直径为10～100 nm、长度约几个微米的As掺杂ZnO纳米线. 扫描电镜、EDX分析及透射电镜分析显示, ZnO纳米线具有较好的晶态结构. 对As掺杂前后的ZnO纳米线进行光学特性测量, 结果表明, ZnO纳米线在385 nm处有较强的紫外发光峰, 在505 nm左右有较弱的蓝绿发光峰; As掺杂较大地改变了ZnO纳米线的发光性质, 使本征发光峰移到393 nm处, 蓝绿发光强度有了很大程度的提高.

Luminescence Properties of As-doping ZnO Nanowires

The As-doping ZnO nanowires were synthesized via a chemical vapor deposition method. SEM, EDX, and HRTEM measurements demonstrated that ZnO nanowires possessed good crystal structures. The luminescence spectra had two emission peaks at about 385 nm and 505 nm. As-doping had effect on the luminescence property of ZnO nanowires, the emission peak at 385 nm shifted to 393 nm, and the intensity of the emission peak at 505 nm increased distinctly.