Coulomb blockade sensors based on nanostructured mesoporous silicon

Mesoporous silicon (mesoPS) is a nanosponge where Si nanocrystals are interconnected forming a disordered 3D array. The electronic characteristics of this material are particularly interesting, due to some intriguing effects, such as a huge increase of conductivity, reversible insulator-to-metal transition and n- or p-type doping of the nanocrystals, exhibited in presence of donor or acceptor molecules like NH₃ and NO₂. Here we report on the observation of a sharp conductance gap, which can be ascribed to Coulomb blockade phenomena. Moreover, we show that the width of the gap can be tuned by NO₂ molecules, so that the fabrication of highly sensitive threshold sensors is possible. Our results suggest that electrochemical etching of heavily doped Si can be used as a simple self-assembly technique for the production of Si nanocrystal arrays and for the fabrication of sensitive nanosensors.