Defect-induced transitions in synchronous asymmetric exclusion processes |
| |
Authors: | Mingzhe Liu Ruili Wang Rui Jiang Yang Gao |
| |
Affiliation: | a School of Engineering and Advanced Technology, Massey University, New Zealand b State Key Laboratory for Novel Software Technology, Nanjing University, Nanjing, China c School of Engineering Science, University of Science and Technology of China, Hefei, China d Department of Computer Science, Nanjing University, Nanjing, China |
| |
Abstract: | The effects of a single local defect in synchronous asymmetric exclusion processes are investigated via theoretical analysis and Monte Carlo simulations. Our theoretical analysis shows that there are four possible stationary phases, i.e., the (low density, low density), (low density, high density), (high density, low density) and (high density, high density) in the system. In the (high density, low density) phase, the system can reach a maximal current which is determined by the local defect, but independent of boundary conditions. A phenomenological domain wall approach is developed to predict dynamic behavior at phase boundaries. The effects of defective hopping probability p on density profiles and currents are investigated. Our investigation shows that the value of p determines phase transitions when entrance rate α and exit rate β are fixed. Density profiles and currents obtained from theoretical calculations are in agreement with Monte Carlo simulations. |
| |
Keywords: | 05.70.Ln 02.50.Ey 05.60.Cd |
本文献已被 ScienceDirect 等数据库收录! |
|