Study on external-cavity semiconductor laser |
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引用本文: | 金杰,焦强,李奕,吕福云,张光寅. Study on external-cavity semiconductor laser[J]. 中国光学快报(英文版), 2003, 1(3) |
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作者姓名: | 金杰 焦强 李奕 吕福云 张光寅 |
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作者单位: | College of Electronic Information Engineering,Tianjin University,Tianjin 300072,Radio Factory,Tianijn University,Tianjin 300072,College of Electronic Information Engineering,Tianjin University,Tianjin 300072,Institute of Physics,Nankai University,Tianjin 300071,Institute of Physics,Nankai University,Tianjin 300071 |
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基金项目: | This work was supported by the Natural Science Foundation of Tianjin under Grant No. 993600711 and Doctor Foundation of Hebei. |
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摘 要: | In this paper, a narrow-band tunable external-cavity semiconductor laser with the Littman set-up is reported. The laser system consists of a semiconductor laser, a blazed grating and an external mirror. Its sideband suppression ratio over 20 dB was obtained. Conveniently tuning in wavelength region of 797.38 - 807.26 nm was achieved. The laser is operating in single frequency with narrow linewidth smaller than 0.06 nm. The output beam has good directional stability when tuned.
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Study on external-cavity semiconductor laser |
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Abstract: | In this paper, a narrow-band tunable external-cavity semiconductor laser with the Littman set-up isreported. The laser system consists of a semiconductor laser, a blazed grating and an external mirror.Its sideband suppression ratio over 20 dB was obtained. Conveniently tuning in wavelength region of797.38 - 807.26 nm was achieved. The laser is operating in single frequency with narrow linewidth smallerthan 0.06 nm. The output beam has good directional stability when tuned. |
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