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非聚焦电子束照射SiO2薄膜带电效应
引用本文:李维勤,张海波,鲁君.非聚焦电子束照射SiO2薄膜带电效应[J].物理学报,2012,61(2):27302-027302.
作者姓名:李维勤  张海波  鲁君
作者单位:西安理工大学自动化与信息工程学院, 西安 710048;西安交通大学电子科学与技术系电子物理与器件教育部重点实验室, 西安 710049;西安交通大学电子科学与技术系电子物理与器件教育部重点实验室, 西安 710049;西安理工大学自动化与信息工程学院, 西安 710048
基金项目:国家自然科学基金(批准号: 60476018), 陕西省教育厅科研计划项目(批准号: 11JK0926)和西安理工大学博士科研启动基金(批准号: 105-211005)资助的课题.
摘    要:采用考虑电子散射、俘获、输运和自洽场的三维数值模型, 模拟了低能非聚焦电子束照射接地SiO2薄膜的带电效应. 结果表明, 由于电子的迁移和扩散, 电子会渡越散射区域产生负空间电荷分布. 空间电荷呈现在散射区域内为正, 区域外为负的交替分布特性. 对于薄膜负带电, 电子会输运至导电衬底形成泄漏电流, 其暂态过程随泄漏电流的增加趋于平衡. 而正带电暂态过程随返回二次电子的增多而趋于平衡. 在平衡态时, 负带电表面电位随薄膜厚度、陷阱密度的增大而降低, 随电子迁移率、薄膜介电常数的增大而升高;而正带电表面电位受它们影响较小.

关 键 词:二氧化硅薄膜  电子束照射  带电效应  空间电荷
收稿时间:2012-02-27

Charging effects of SiO2 thin films under defocused electron beam irradiation
Li Wei-Qin,Zhang Hai-Bo and Lu Jun.Charging effects of SiO2 thin films under defocused electron beam irradiation[J].Acta Physica Sinica,2012,61(2):27302-027302.
Authors:Li Wei-Qin  Zhang Hai-Bo and Lu Jun
Institution:1)) 1)(School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048,China) 2)(Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Department of Electronic Science and Technology,Xi’an Jiaotong University,Xi’an 710049,China)
Abstract:Based on a three-dimensional self-consistent numerical model with consideration of electron scattering, trapping and transport, the charging effects due to low-energy defocused electron beam irradiation are simulated for a SiO2 thin film with a grounded conductive substrate. The results show that because of electron drift and diffusion, electrons can transit the electron scattering region, forming negative space charges. The space charge is, therefore, positive and negative within and outside the scattering region, respectively. Some electrons can flow to the conductive substrate, forming the leakage current, and the transient negative charging process tends to equilibrium as the leakage current increases. In comparison, the transient positive charging process approaches equilibrium with the number of returned electrons increasing due to the positive surface potential. In the equilibrium state, the surface potential of the film negatively charged decreases with film thickness and trap density increasing; it increases with electron mobility and dielectric constant. However, the equilibrium surface potential of the film positively charged varies slightly with film parameter.
Keywords:SiO2 thin films  electron beam irradiation  charging effects  space charges
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