Microstructure and properties of Si-TaSi2 eutectic in situ composite for field emission |
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作者姓名: | CUI ChunJuan ZHANG Jun HAN Min CHEN Jun XU NingSheng LIU Lin FU HengZhi |
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作者单位: | [1]State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China [2]State Key Laboratory of Optoelectronic Materials and Technology, Zhongshan University, Guangzhou 510275, China |
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基金项目: | Supported by the National Natural Science Foundation of China (Grant No. 50102004),the Aeronautical Science Foundation of China (Grant No. 04G53048),the Developing Program for Outstanding Persons in NPU |
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摘 要: | The Si-TaSi2 eutectic in situ composite for field emission is prepared by electron beam floating zone melting (EBFZM) technique on the basis of Czochralski (CZ) crystal growth technique. The directional solidification microstructure and the field emission properties of the Si-TaSi2 eutectic in situ composite prepared by two kinds of crystal growth techniques have been systematically tested and compared. Researches demonstrated that the solidification microstructure of EBFZM can be fined obviously be-cause of the relatively high solidification rate and very high temperature gradient, i.e. both the diameter and inter-rod spacing of the TaSi2 fibers prepared by EBFZM technique were decreased, and the density and the volume fraction of the TaSi2 fibers prepared by EBFZM technique were increased in comparison with that of the TaSi2 fibers prepared by CZ method. Therefore the field emission property of the Si-TaSi2 eutectic in situ composite prepared by EBFZM can be improved greatly, which exhibits better field emission uniformity and straighter F-N curve.
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关 键 词: | 硅化钽 Si-TaSi2共晶 原位复合材料 场发射显示屏 显微结构 性质 |
收稿时间: | 8 July 2006 |
修稿时间: | 2006-07-082006-10-13 |
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