Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0– |
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| Authors: | T Saito T Nakaoka T Kakitsuka Y Yoshikuni Y Arakawa |
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| Institution: | aNanoelectronics Collaborative Research Center, Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;bResearch Center for Advanced Science and Technology, University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;cNTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan |
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| Abstract: | We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6–. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing ) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs. |
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| Keywords: | Stacked quantum dots Strain Electronic states |
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