| GeSb_2Te_4相变光存储薄膜材料的短波长静态记录特性的研究 |
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| 引用本文： | 门丽秋,姜复松,刘超,干福熹. GeSb_2Te_4相变光存储薄膜材料的短波长静态记录特性的研究[J]. 光学学报, 1997, 17(1): 102-105 |
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| 作者姓名： | 门丽秋 姜复松 刘超 干福熹 |
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| 作者单位： | 中国科学院上海光学精密机械研究所 |
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| 摘 要： | 研究了单层ＧｅＳｂ２Ｔｅ４真空射频溅射薄膜在４００ｎｍ～８３０ｎｍ区域的吸收、反射光谱和光学常数（ｎ，ｋ），发现ＧｅＳｂ２Ｔｅ４薄膜在４００ｎｍ～６００ｎｍ波长范围内具有较强的吸收。在短波长静态测试仪上测试了ＧｅＳｂ２Ｔｅ４薄膜的光存储记录特性，发现在５１４．５ｎｍ波长用较低功率的激光辐照样品时薄膜在写入前后的反射率变化较大，擦除前后的反射率对比度较低，可通过膜层设计来提高
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| 关 键 词： | 相变材料，光存储，反射率对比度 |
| 收稿时间： | 1996-01-15 |
Optical Recording Performance of GeSb 2Te 4 Phase Change Thin Film Material Using Short Wavelength (514.5 nm) Laser |
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| Men Liqiu Jiang Fusong Gan Fuxi. Optical Recording Performance of GeSb 2Te 4 Phase Change Thin Film Material Using Short Wavelength (514.5 nm) Laser[J]. Acta Optica Sinica, 1997, 17(1): 102-105 |
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| Authors: | Men Liqiu Jiang Fusong Gan Fuxi |
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| Abstract: | The optical properties of monolayer GeSb 2Te 4 thin film prepared by vacuum RF sputtering method at the region 400～830 nm were studied. A comparatively large absorption was observed in the wavelength range of 400～600 nm. The optical storage characteristics of GeSb 2Te 4 thin film indicated that larger reflectivity contrast can be obtained at lower writing power Argon laser (514.5 nm) . The erasing reflectivity contrast is low, but it can be improved by multi layer films match. |
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| Keywords: | phase change material optical storage reflectivity contrast. |
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