Impurity photoconductivity in strained <Emphasis Type="Italic">p</Emphasis>-InGaAs/GaAsP heterostructures |
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Authors: | V Ya Aleshkin A V Antonov V I Gavrilenko B N Zvonkov D V Kozlov |
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Institution: | (1) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia |
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Abstract: | The impurity-photoconductivity spectrum is observed for strained quantum wells of the p-InGaAs/GaAs solid solution at T= 4.2 K. In addition to the broad photoconductivity band attributed to the transitions from the acceptor ground state to the continuum of the first size-quantization subband, the spectrum exhibits a peak due to the transitions from the ground state to the excited localized acceptor state, a band corresponding to the transitions to the resonance states associated with the second heavy-hole size-quantization subband, and a narrow photoconductivity peak (Fano resonance) in the spectral range corresponding to the optical-phonon energy. |
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