| 碲镉汞异质结能带结构的优化设计 |
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| 引用本文： | 全知觉,孙立忠,叶振华,李志锋,陆卫.碲镉汞异质结能带结构的优化设计[J].物理学报,2006,55(7):3611-3616. |
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| 作者姓名： | 全知觉 孙立忠 叶振华 李志锋 陆卫 |
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| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室，上海 200083 |
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| 基金项目： | 国家研究发展基金;中国科学院资助项目 |
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| 摘 要： | 分别对带隙较宽(较窄)的p型材料在带隙较窄(较宽)的n型材料之上的碲镉汞(MCT)异质结的能带结构进行了理论分析.在应用的理论模型中提出了一个简单的载流子浓度近似模型用于计入载流子简并效应和导带非抛物线性，同时还考虑到了价带失配的影响.就p-n结位置(zB)和界面电荷密度(Q)两个参数对MCT异质结能带结构的影响进行了系统分析，发现这些影响是不可忽略的.根据这些影响特征，进一步得出了zB和Q参数之间的优化设计规律.
关键词：
碲镉汞(MCT)
异质结
载流子浓度近似
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| 关 键 词： | 碲镉汞(MCT) 异质结 载流子浓度近似 |
| 文章编号： | 1000-3290/2006/55（07）/3611-06 |
| 收稿时间： | 05 17 2005 12:00AM |
| 修稿时间： | 2005-05-172005-12-26 |
Optimization design of the band profiles of HgCdTe heterojunctions |
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| Quan Zhi-Jue,Sun Li-Zhong,Ye Zhen-Hua,Li Zhi-Feng,Lu Wei.Optimization design of the band profiles of HgCdTe heterojunctions[J].Acta Physica Sinica,2006,55(7):3611-3616. |
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| Authors: | Quan Zhi-Jue Sun Li-Zhong Ye Zhen-Hua Li Zhi-Feng Lu Wei |
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| Institution: | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | In this paper, the band profiles of HgCdTe (MCT) heterojunctions with the configuration of wide/narrow gap-p on narrow/wide gap-n are calculated, respectively. In the theoretical model employing a valence band offset, a new simple carrier density approximation is proposed to include the carrier degeneracy and conduction band non-parabolicity in the calculations. The effects of the location of p-n junction (zB) and the interface charge density (Q) on the band profiles of MCT heterojunctions are studied systemically, which is found to be significant and can't be neglected. With the help of the results of above research, the optimal design related to zB and Q is obtained. |
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| Keywords: | HgCdTe (MCT) heterojunction carrier density approximation |
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