Oxynitride gate dielectric grown in nitric oxide (NO): the effectof reoxidation on dielectric reliability of the active edge

Reoxidation of an oxynitride gate dielectric grown by NO anneal of thermal oxide has been studied. This process has demonstrated ~3-5X improvement of Q_BD of active edge intensive capacitors in comparison to thermal oxide, N₂O and NO oxynitride. This improvement is believed to be due to the reduction of local thinning of the gate dielectric at the field oxide edge which also reduces local build-up of positive charge near the gate electrode at the isolation edges