| Abstract: | The processes of defect formation in single crystals of gallium arsenide electron-irradiated at cryogenic temperatures (∼20
K) have been investigated by the luminescence method. It is shown that at such temperatures the primary radiation-induced
defects, in particular, intrinsic interstitial atoms, can migrate in a crystal and form complexes with their participation.
Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., Minsk, 220072,
Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 122–124, January–February, 1997. |
