Abstract: | Dislocation combinations formed as a result of interaction between a glissileBσ,d Shockley partial dislocation with reacting undissociated forest dislocations are considered. The value of the parameters characterizing the strength of the dislocation combinations, the probability βr of their formation, and the interaction intensity αr of the reacting dislocations are determined for an orientation of the [100] deformation axis of an FCC single crystal for all components of the dislocation loop. Tomsk State Architectural-Building Academy. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 3–8, May, 1997. |