High-temperature single-hole silicon transistors |
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| Authors: | N.T. Bagraev L.E. Klyachkin A.M. Malyarenko W. Gehlhoff |
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| Affiliation: | aA. F. Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia;bTechnische Universität Berlin, Arbeitsgruppe EPR am Institut für Festkörperphysik, Rudower Chaussee 5, Berlin, D-12489, Germany |
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| Abstract: | We present high-temperature (77 K, 300 K) single-hole n+–p+–n transistors based on silicon diffusion nanostructures. This is made possible by utilizing a quantum wire with isolated quantum dots, which is naturally formed inside an ultrashallow p+-diffusion profile using nonequilibrium diffusion processes. |
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| Keywords: | quantum dot single-hole tunneling transistor |
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