Light-induced isotopic exchange between O2 and semiconductor oxides, a characterization method that deserves not to be overlooked

This article first indicates the various types of temperature-induced oxygen isotopic exchange (OIE) that can occur between labeled gaseous O₂ and solid oxides. Earlier main results of light-induced OIE with semiconductor oxides are then briefly reviewed. The core of the article reports new results about the use of light-induced OIE to assess (i) the lability of TiO₂ surface O atoms, as altered by calcination or Se deposits, via the comparison of OIE with the photocatalytic removal of methanol in air and (ii) the accessibility of TiO₂ affixed on a fiberglass material by means of a silica binder. Both this overview and these novel results illustrate the interest of OIE in heterogeneous photocatalysis.