| 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性 |
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| 引用本文： | 王小丽,王文新,江洋,马紫光,崔彦翔,贾海强,宋京,陈弘.具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J].发光学报,2011,32(11):1152-1158. |
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| 作者姓名： | 王小丽 王文新 江洋 马紫光 崔彦翔 贾海强 宋京 陈弘 |
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| 作者单位： | 1. 中国科学院物理研究所 清洁能源前沿研究重点实验室, 北京 100190;
2. 天津中环新光科技有限公司, 天津 300385 |
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| 基金项目： | 国家自然科学基金(60877006,60890192/F0404,50872146); 科技部“973”计划(2010CB327501)资助项目 |
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| 摘 要： | 研究了具有InGaN/GaN超晶格(SL)插入结构的绿光InGaN/GaN多量子阱(MQW)的发光特性。结构测试表明,SL插入结构并没有引起MQW中平均In组份的增加,而是改变了In组份的分布,形成了高In组份的量子点和低In组份量子阱。其电致发光(EL)谱和光致发光(PL)谱均出现了双发光峰。我们认为这两个 峰分别来自于量子点和量子阱,且存在着载流子从阱向点转移的输运机制。最后变温PL积分强度的Arrhenius 拟合表明,SL插入结构并没有在MQW中引入新的缺陷,使其发光效率下降。
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| 关 键 词： | InGaN/GaN多量子阱 超晶格 电致发光 光致发光 |
| 收稿时间： | 2011-05-19 |
Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures |
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| WANG Xiao-li,WANG Wen-xin,JIANG Yang,MA Zi-guang,GUI Yan-xiang,JIA Hai-qiang,SONG Jing,CHEN Hong.Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures[J].Chinese Journal of Luminescence,2011,32(11):1152-1158. |
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| Authors: | WANG Xiao-li WANG Wen-xin JIANG Yang MA Zi-guang GUI Yan-xiang JIA Hai-qiang SONG Jing CHEN Hong |
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| Institution: | 1. Renewable Energy Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. Tianjing Zhonghuan Neolight Technology Company, Tianjin 300385, China |
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| Abstract: | Green InGaN/GaN multiple quantum well(MQW) LEDs employing InGaN/GaN superlattice(SL) structure were studied.The distribution of indium within the MQWs is changed by inserting the InGaN/GaN SL.Meanwhile,the average indium content of MQW does not change.Two InGaN-related peaks that were clearly found in the electroluminescence(EL) and photoluminescence(PL) spectrum,which are assigned to In-rich quantum dots(QD) and the InGaN matrix,respectively.It is suggested that the carrier drifts from the InGaN matrix to ... |
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| Keywords: | InGaN/GaN multi-quantum wells superlattices electroluminescence photoluminescence |
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