| S波段低温低噪声放大器技术研究 |
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| 引用本文： | 王贤华,左涛.S波段低温低噪声放大器技术研究[J].低温与超导,2011,39(10):78-80. |
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| 作者姓名： | 王贤华 左涛 |
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| 作者单位： | 中国电子科技集团公司第十六研究所,合肥,230043 |
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| 摘 要： | 介绍了低温低噪声放大器使用的HEMT(高迁移率晶体管)器件噪声模型的建立,对HEMT用S参数和噪声参数讲行仿直,获取适合的模型.给出了实例,放大器在低温10K工作,增益≥30dB,噪声温度≤4K.
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| 关 键 词： | 低温 低噪声放大器(LNA) 高迁移率晶体管(HEMT) |
Study on cryogenic and low noise amplifier at S-band |
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| Wang Xianhua,Zuo Tao.Study on cryogenic and low noise amplifier at S-band[J].Cryogenics and Superconductivity,2011,39(10):78-80. |
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| Authors: | Wang Xianhua Zuo Tao |
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| Institution: | Wang Xianhua,Zuo Tao(China Electronics Technology Group Corporation No.16 Research Institute,Hefei 230043,China) |
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| Abstract: | Noise equivalent circuit model of a cryogenic and low noise amplifier consisted of HEMT was presented.S parameter and noise value of HEMT were simulated.An exemple was given to show that the gain is more than 30dB and noise temperature is less than 4K when the amplifier works at 10K. |
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| Keywords: | Cryogenic Low noise amplifier(LNA) High electron mobilitytransistor(HEMT) |
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