Silicon two-emitter differential tensotransistor with an accelerating electric field in the base |
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| Authors: | G G Babichev S I Kozlovskii V A Romanov N N Sharan |
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| Institution: | (1) Institute of Semiconductor Physics, Academy of Sciences of Ukraine, 252650 Kiev, Ukraine |
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| Abstract: | Results are presented from a study of silicon two-emitter tensotransistors. Tensotransistors are strain-sensitive semiconductor
devices with a horizontal structure and an internal differential output. The optimum device topology and its main characteristics
are determined. The transfer coefficient of the transistor is close to unity.
Zh. Tekh. Fiz. 69, 63–68 (October 1999) |
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