| The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors |
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| 作者姓名： | 曹艳荣 马晓华 郝跃 田文超 |
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| 作者单位： | School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China;School of Technical Physics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China |
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| 基金项目： | Project supported by the Fundamental Research Funds in Xidian Universities (Grant No. JY10000904009) and the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2007BAK25B03) |
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| 摘 要： | Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal- oxide-semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25-0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction-diffusion model with H+ related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H+ generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H+ generated during NBTI stress.
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| 关 键 词： | NBTI 90nm p-channel metal–oxide–semiconductor field-effect transistors (PMOS- FETs) model |
| 收稿时间： | 2009-09-18 |
The study on mechanism and model of negative bias temperature instability degradation in P-channel metal—oxide—semiconductor field-effect transistors |
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| Cao Yan-Rong,Ma Xiao-Hu,Hao Yue and Tian Wen-Chao.The study on mechanism and model of negative bias temperature instability degradation in P-channel metal-oxide-semiconductor field-effect transistors[J].Chinese Physics B,2010,19(9):97306-097306. |
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| Authors: | Cao Yan-Rong Ma Xiao-Hu Hao Yue and Tian Wen-Chao |
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| Institution: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China; School of Technical Physics, Xidian University, Xi'an 710071, China |
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| Abstract: | Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal--oxide--semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25--0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction--diffusion model with H + related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H + generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H+ generated during NBTI stress. |
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| Keywords: | NBTI 90nm p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs) model |
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