| 可控硅YCR008触发电流IGT跳档的探讨 |
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| 引用本文： | 耿凤美.可控硅YCR008触发电流IGT跳档的探讨[J].电子质量,2007(5):17-19. |
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| 作者姓名： | 耿凤美 |
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| 作者单位： | 江苏长电科技股份有限公司,江苏,江阴,214431 |
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| 摘 要： | 可控硅触发电流IGT经常出现跳档,本文着重分析可控硅YCR008跳档原因并提出解决方案.
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| 关 键 词： | IGT VRGM VFGM 漏电流 软击穿 |
| 文章编号： | 1003-0107（2007）05-0017-03 |
Discussion on the Shift of Silicon Controlled Rectifiers YCR008 Trigger Current IGT |
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| Gen Feng-mei.Discussion on the Shift of Silicon Controlled Rectifiers YCR008 Trigger Current IGT[J].Electronics Quality,2007(5):17-19. |
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| Authors: | Gen Feng-mei |
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| Institution: | Jiangsu Changjiang Electronics Technology Co,Ltd.Jiangyin 214431 ,China |
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| Abstract: | Silicon Controlled Rectifiers YCR008 Trigger Current IGT often shifts. The article introduced the analysis of shift reason of YCR008 and discussed the solutions. |
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| Keywords: | IGT VRGM VFGM |
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