| 提高MOS功率晶体管封装可靠性技术研究 |
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| 引用本文： | 张国光,郑学仁,张顺,张国俊,郑春扬,吴朝晖.提高MOS功率晶体管封装可靠性技术研究[J].电子产品可靠性与环境试验,2009,27(6):1-4. |
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| 作者姓名： | 张国光 郑学仁 张顺 张国俊 郑春扬 吴朝晖 |
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| 作者单位： | 1. 佛山市蓝箭电子有限公司,广东,佛山,528000
2. 华南理工大学电子与信息学院,广东,广州,510640 |
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| 摘 要： | 功率MOS晶体管的正向导通电阻是器件的重要指标，严重影响器件的使用可靠性。从封装材料、封装工艺等方面论述功率MOS管降低导通电阻、控制空洞、提高器件可靠性的封装技术，并通过一些实例来阐述工艺控制的效果。
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| 关 键 词： | 金属-氧化物-半导体器件 功率晶体管 封装 导通电阻 器件可靠性 |
Improving the Reliability of Power MOSFET Package |
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| ZHANG Guo-guang,ZHENG Xue-ren,ZHANG shun,ZHANG Guo-jun,ZHENG Chun-yang,WU Chao-hui.Improving the Reliability of Power MOSFET Package[J].Electronic Product Reliability and Environmental Testing,2009,27(6):1-4. |
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| Authors: | ZHANG Guo-guang ZHENG Xue-ren ZHANG shun ZHANG Guo-jun ZHENG Chun-yang WU Chao-hui |
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| Institution: | ZHANG Guo-guang1,ZHENG Xue-ren2,ZHANG shun1,ZHANG Guo-jun1,ZHENG Chun-yang1,WU Chao-hui2(1.Foshan Blue Rocket Electronics Co.Ltd.,Foshan 528000,China,2.School of Electronic and Information Engineering of South China University of Technology,Guangzhou 510640,China) |
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| Abstract: | The forward on-resistance of a VDMOS power transistor is an important parameter,which has a great effect on the device reliability.Several package techniques such as decreasing the on-resistance and controlling the voids in the solder layer to improve the reliability are discussed and illustrated with some actual examples in this paper. |
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| Keywords: | MOSFET power transistor package on-resistor device reliability |
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