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Study on the delamination of tungsten thin films on Sb2Te3
作者姓名:徐嘉庆  刘 波  宋志棠  封松林  Bomy Chen
作者单位:Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China;Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China;Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China;Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China;Silicon Storage Technology, Inc., 1171 Sonora Court,Sunnyvale, CA 94086, USA
基金项目:Project Supported by the National High Technology Development Program of China (Grant No 2004AA302G20), Science and Technology Council of Shanghai (Grant Nos 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043, Chinese Academy of Sciences (Grant No Y2005027), and Silicon Storage Technology, Inc.
摘    要:To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb2Te3 bilayer system surface are observed by field emission scanning electronic microscope (FESEM) and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.

关 键 词:分层  附着力  可靠性  电极原料  薄膜
收稿时间:2005-08-25
修稿时间:2005-08-252006-04-29

Study on the delamination of tungsten thin films on Sb2Te3
Xu Jia-Qing,Liu Bo,Song Zhi-Tang,Feng Song-Lin and Chen Bomy.Study on the delamination of tungsten thin films on Sb2Te3[J].Chinese Physics B,2006,15(8):1849-1854.
Authors:Xu Jia-Qing  Liu Bo  Song Zhi-Tang  Feng Song-Lin and Chen Bomy
Abstract:To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb$_{2}$Te$_{3}$ bilayer system surface are observed by field emission scanning electronic microscope (FESEM) and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.
Keywords:C-RAM  delamination  adhesion
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