| 对硅片进行无抗蚀膜光化学蚀刻的一种新方法 |
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| 引用本文： | 杨杰,刘焰发,村原正隆.对硅片进行无抗蚀膜光化学蚀刻的一种新方法[J].中国激光,2002,29(3):286-288. |
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| 作者姓名： | 杨杰 刘焰发 村原正隆 |
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| 作者单位： | 1. 中山大学超快速激光光谱学国家重点实验室,广东广州,510275
2. 东海大学工学部电气工学科,日本,259-1292 |
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| 基金项目： | 广东省自然科学基金 (970 15 0,990 2 2 0 )，国家自然科学基金 (6 0 0 780 18)资助项目 |
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| 摘 要： | 研究了一种在硅片上进行无抗蚀膜光化学蚀刻的新方法 ,使用过氧化氢 (H2 O2 )和氟酸 (HF)作为光化学媒质 ,使用ArF紫外激光作为光源 ,无需事先加工抗蚀膜 ,可直接在硅表面进行蚀刻。在H2 O2 与HF的浓度比为 1.3时 ,蚀刻效果最佳 ,当激光能量密度为 2 9mJ/cm2 ,照射脉冲数为 10 0 0 0次时 ,得到 2 10nm的蚀刻深度
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| 关 键 词： | 硅片 紫外激光 无抗蚀膜光化学蚀刻 |
| 收稿时间： | 2000/9/8 |
A New Method of Resistless Photochemical Etching for Silicon Wafer |
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| YANG Jie ,LIU Yan-fa ,MURAHARA Masataka State Key Laboratory of Ultrafast Spectroscopy,Zhongshan University,Guangzhou.A New Method of Resistless Photochemical Etching for Silicon Wafer[J].Chinese Journal of Lasers,2002,29(3):286-288. |
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| Authors: | YANG Jie LIU Yan-fa MURAHARA Masataka State Key Laboratory of Ultrafast Spectroscopy Zhongshan University Guangzhou |
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| Institution: | YANG Jie 1,LIU Yan-fa 1,MURAHARA Masataka 2 1State Key Laboratory of Ultrafast Spectroscopy,Zhongshan University,Guangzhou 510275 2Department of Electrical Engineering,Tokai University,Japan 259-1292 |
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| Abstract: | A new method of resistless photochemical etching for silicon wafer is developed, which is using hydrogen peroxide (H 2O 2) and hydrogen fluoride (HF) as activated species, ArF ultraviolet laser as a photon source. Silicon wafer can be directly etched without photo-resists. When the concentration ratio of H 2O 2/HF is 1.3, the optimized etching was found. At the energy density of 29 mJ/cm 2 as well as the shot numbers of 10000, the maximum etching depth of 210 nm was obtained. |
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| Keywords: | silicon wafer UV laser resistless photochemical etching |
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