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Microdoping of subsurface gallium arsenide layers with hydrogen ions |
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| Authors: | V. V. Anisimov V. P. Demkin I. A. Kvint S. V. Mel’nichuk B. S. Semukhin |
| Affiliation: | (1) Tomsk State University, Tomsk, 634050, Russia;(2) Institute of Physics of Strength and Materials Science, Siberian Division of the Russian Academy of Sciences, Toms, 634021, Russia |
| Abstract: | A method of microdoping subsurface semiconductor layers with hydrogen ions (protons) with the use of a plasma-beam discharge is suggested. The method was tested on gallium arsenide layers and was proven to be more efficient than other well-known methods used for modifying subsurface layers. |
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