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Comparison of BJT and MESFET front ends in broadband optical transimpedance preamplifiers |
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| Authors: | S. Moustakas J. L. Hullett T. D. Stephens |
| Affiliation: | (1) Department of Electrical and Electronic Engineering, University of Western Australia, 6009 Nedlands, Australia;(2) Telecom Australia Research Laboratories, 770 Blackburn Road, 3168 Clayton North, Victoria, Australia;(3) Present address: Siemens AG, ZFE FL OPT 23, Otto-Hahn-Ring 6, D-8000 Munich 83, Federal Republic of Germany |
| Abstract: | We show in this paper that little noise penalty is incurred by using readily available bipolar junction transistors in place of GaAs MESFETs in the first stage of high-speed optical transimpedance preamplifiers. |
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