Control of structure and electric properties of amorphous organic semiconductive thin films prepared by excimer laser ablation

Excimer laser ablation (ELA) of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) with ArF (193 nm), KrF (248 nm), XeCl (308 nm), and XeF (351 nm) beams under optimized conditions enables us to obtain organic semiconductor thin films with various structures such as amorphous carbon, polyperinaphthalene (PPN), and PTCDA itself. Electric conductivity and carrier species of the films depend strongly on the ablation wavelength, fluence, substrate temperature, and ambient vapor species. It is found that electric conductivities of the films are controllable, ranging from 10^-6 to 10¹ S cm^-1 with the selection of appropriate ablation conditions. An organic pn junction is successfully constructed by the change of ablation conditions during ELA. Furthermore, ELA of PTCDA at 248 nm in iodine vapor leads to formation of tetraiodoallene in the film.