| 硅在脉冲激光作用下温度积累效应的数值模拟 |
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| 引用本文： | 孙 鹏,李 沫,杨庆鑫,汤 戈,张 健.硅在脉冲激光作用下温度积累效应的数值模拟[J].太赫兹科学与电子信息学报,2018,16(1):158-163. |
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| 作者姓名： | 孙 鹏 李 沫 杨庆鑫 汤 戈 张 健 |
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| 作者单位： | 1a.Microsystems & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China；1b.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,1a.Microsystems & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China；1b.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Department of Physics，Harbin Institute of Technology，Harbin Heilongjiang 150000，China,1a.Microsystems & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China；1b.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China and 1a.Microsystems & Terahertz Research Center，China Academy of Engineering Physics，Chengdu Sichuan 610200，China；1b.Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China |
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| 基金项目： | 中国工程物理研究院院长基金资助项目(2014-1-100) |
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| 摘 要： | 采用单温模型，利用有限元方法对硅在纳秒脉冲激光作用下的温度积累效应进行了数值模拟。给出了单脉冲、多脉冲作用下，硅表面附近的非平衡载流子浓度、自由载流子吸收系数和晶格温度随时间的变化规律。结果表明，自由载流子浓度的积累是温度积累的主要来源。对于多脉冲作用情况，脉冲间隔越短，脉宽越窄，温度积累效应越明显，最终形成的瞬时晶格最高温和温升值越大，越容易对材料造成损伤。
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| 关 键 词： | 激光脉冲 温度积累效应 晶格温度 重复频率 损伤阈值 脉宽 |
| 收稿时间： | 2017/5/25 0:00:00 |
| 修稿时间： | 2017/9/14 0:00:00 |
Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses |
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| SUN Peng,LI Mo,YANG Qingxin,TANG Ge and ZHANG Jian.Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses[J].Journal of Terahertz Science and Electronic Information Technology,2018,16(1):158-163. |
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| Authors: | SUN Peng LI Mo YANG Qingxin TANG Ge and ZHANG Jian |
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