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Electrical properties of microcrystalline Sc3N@C80 fullerene |
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| Authors: | Tsuyoshi Takase Masamichi Sakaino Kenta Kirimoto Yong Sun |
| Institution: | 1. The School of International Languages and Cultures, Baiko Gakuin University, Koyocho 1-1-1, Shimonoseki, Yamaguchi, 750-8511, Japan 4. Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka, 804-8550, Japan 2. Department of Vehicle Production Engineering, Nissan Motor Co., Ltd., 560-2, Okatsukoku, Atsugi-city, Kanagawa, 243-0192, Japan 3. Department of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu, Fukuoka, 802-0985, Japan |
| Abstract: | The electrical properties of microcrystalline Sc3N@C80 fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C80 sample has an energy band gap of 1.71 eV, which does not depend on the strength of the applied electric field. But when the temperature is above 450 K, a phase transition which results in a small band gap of 1.22 eV occurs under electric field strengths larger than 1 kV/cm. We also found from Cole–Cole plots of a.c. impedance that the contact resistance at the Au/Sc3N@C80 interface is less than that at the Au/C60 interface. |
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