Investigation of blue InGaN light-emitting diodes with step-like quantum well |
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| Authors: | Miao-Chan Tsai Sheng-Horng Yen Yen-Kuang Kuo |
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| Affiliation: | 1.Institute of Photonics,National Changhua University of Education,Changhua,Taiwan;2.R&D Division, Epistar Co., Ltd.,Science-based Industrial Park,Hsinchu,Taiwan;3.Department of Physics,National Changhua University of Education,Changhua,Taiwan |
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| Abstract: | The concept of a step-like quantum well is proposed with the purpose to reduce the influence of electrostatic field resulting from the piezoelectric effect on the optical performance of blue InGaN light-emitting diodes. Particularly, the optical properties of the LED structures with the In0.23Ga0.77N single quantum well, In0.20Ga0.80N/In0.26Ga0.74N step-like quantum well, and In0.26Ga0.74N/In0.20Ga0.80N step-like quantum well are numerically investigated in detail. Simulation results show that the In0.20Ga0.80N/In0.26Ga0.74N step-like-quantum-well LED structure has the best optical performance in virtue of the improvement in spatial overlap of electrons and holes in the quantum well. |
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