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异质薄膜外延生长中温度对失配位错出现厚度的影响
引用本文:张凤林,肖亮,许卫兵,项少辉.异质薄膜外延生长中温度对失配位错出现厚度的影响[J].原子与分子物理学报,2014,31(6):781-788.
作者姓名:张凤林  肖亮  许卫兵  项少辉
作者单位:江西理工大学应用科学学院,江西沃格光电科技有限公司,江西理工大学应用科学学院,江西理工大学应用科学学院
基金项目:江西理工大学科研基金(jxxj12155)
摘    要:采用三维分子动力学模拟方法,使用Ercolessi和Adams建立的嵌入原子法(EAM)多体势函数,模拟了二维晶格失配铝膜晶体中失配位错的形成过程,通过体系结构和能量曲线两种方法研究了温度对位错出现厚度的影响。结果显示:温度对于失配位错的形成有影响。同等条件下,随着温度的增大,失配位错的出现厚度变薄。

关 键 词:位错  二维晶格失配  分子动力学模拟    薄膜晶体

Temperature Effect on Appearance Thickness of Misfit Dislocations in the Epitaxial Growth of Heterogeneous Film
Institution:Faculty of Applied Science, Jiangxi University of Science and Tecnology,Jiangxi Woge Photoelectric Technology Company Limited,Faculty of Applied Science, Jiangxi University of Science and Tecnology,Faculty of Applied Science, Jiangxi University of Science and Tecnology
Abstract:Applying three dimensional molecular dynamics simulation method and multi-body potential function of embedded atom method (EAM) created by Ercolessi and Adams, simulate the formative processes of misfit dislocations in two-dimensional mismatch aluminum film crystal, study the influence of the temperature on thickness of dislocation by the study methods of systemic structure and energetic curve.The result shows that temperature has influence on mismatch dislocation.In the same condition, with the increasement of temperature, the thickness of mismatch dislocation becomes thiner.
Keywords:
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