| Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer |
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| 引用本文： | 王晓华,范希武,单崇新,张吉英,张振中,吕有明,刘益春,贾中元,钟景昌,申德振. Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer[J]. 中国光学快报(英文版), 2003, 1(11) |
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| 作者姓名： | 王晓华 范希武 单崇新 张吉英 张振中 吕有明 刘益春 贾中元 钟景昌 申德振 |
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| 作者单位： | Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，National Key Laboratory of High Power Semiconductor Laser，Changchun University of Science and Technology，Changchun 130022，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，College of Electronic Science and Engineering，Jilin University，Changchun 130023，National Key Laboratory of High Power Semiconductor Laser，Changchun University of Science and Technology，Changchun 130022，Key Laboratory of Excited State Processes，Changchun Institute of Optics，Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033 |
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| 基金项目： | This research was supported by the National Fundamental and Applied Research Project，The Key Project of the National Natural Science Foundation of China (No. 69896260)，the Innovation Project Item, Chinese Academy of Sciences, the Program of CAS Hundred |
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| 摘 要： | In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnO-Si (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0.56Cd0.44Se observed in Raman spectra suggests that the crystal quality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.
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Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer |
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| Abstract: | In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0.56Cd0.44Se observed in Raman spectra suggests that the crystal quality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated. |
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