| Si(111)7×7清洁表面的总电流谱 |
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| 引用本文： | 王向东,胡际璜,戴道宣.Si(111)7×7清洁表面的总电流谱[J].物理学报,1988,37(11):1888-1892. |
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| 作者姓名： | 王向东 胡际璜 戴道宣 |
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| 作者单位： | 复旦大学表面物理实验室 |
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| 摘 要： | 用自制的总电流谱仪对Si(111)7×7清洁表面进行了测量,得到A,B,C,D四个谱峰的能量位置分别在真空能级以上2.6,5.2,8.6和12.9eV。样品饱和吸氢后表面峰A消先。用带间跃迁模型对实验结果作了初步分析。
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| 收稿时间： | 1988-02-17 |
TOTAL CURRENT SPECTROSCOPY STUDY ON CLEAN Si(111)7×7 SURFACE |
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| WANG XIANG-DONG,HU JI-HUANG and DAI DAO-XUAN.TOTAL CURRENT SPECTROSCOPY STUDY ON CLEAN Si(111)7×7 SURFACE[J].Acta Physica Sinica,1988,37(11):1888-1892. |
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| Authors: | WANG XIANG-DONG HU JI-HUANG and DAI DAO-XUAN |
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| Abstract: | A total current spectroscopy measurement has been performed on Si(lll)7×7 surface. Four peaks at 2.6, 5.2, 8.6, and 12.9 eV above vacuum level have been observed on clean surface, assigned as A, B, C, D respectively. Among them, the peak A contributed by the surface state is identified by hydrogen adsorption experiment. A preliminary explanation of the experimental result has been made. |
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