1. School of Metallurgy and Materials, University of Birmingham, Birmingham, UKpangb@bham.ac.uk;3. School of Metallurgy and Materials, University of Birmingham, Birmingham, UK;4. AWE, Aldermaston, Reading, UK
Abstract:
AbstractDislocations in shock loaded tantalum single crystals were imaged using both transmission electron microscope (TEM) and electron channelling contrast image (ECCI) in a scanning electron microscope with a conventional backscattered electron detector. The results were compared with backscattered electron intensity profiles across dislocations calculated via the dynamic theory of electron diffraction. A one-to-one correspondence between ECCI and TEM is established. High voltage and low index reflections should be used to obtain the highest dislocation contrast and greatest imaging depth.