Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers |
| |
Authors: | Akifumi Iijima Isaho Kamata Hidekazu Tsuchida Jun Suda Tsunenobu Kimoto |
| |
Institution: | 1. Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan.iijima@semicon.kuee.kyoto-u.ac.jp;3. Central Research Institute of Electric Power Industry (CRIEPI), Yokosuka, Japan.;4. Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan. |
| |
Abstract: | AbstractShockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed. |
| |
Keywords: | Silicon carbide (SiC) dislocations crystal defects stacking faults |
|
|