Strain relaxation in the epitaxy of La2/3Sr1/3MnO3 grown by pulsed-laser deposition on SrTiO3(001)

With a Curie point at 370?K, the half-metal (La_0.7Sr_0.3)MnO₃ (LSMO) is one of the most interesting candidates for electronic devices based on tunnel magnetoresistance. SrTiO₃ (STO) is up to now the best substrate for the epitaxy of suitable thin films of LSMO. The pseudocubic unit cell of rhombohedral LSMO has a parameter a _LSMO such that (a _STO ? a _LSMO)/a _LSMO = +?0.83% (where a _STO is the parameter of cubic STO) and an angle of 90.26°. As strained growth is tetragonal, relaxation implies recovery of both the pseudocubic parameter and of the original angle. In the LSMO layers that we prepare by pulsed-laser deposition, we show that these two processes are quite independent. The angular distortion is partially recovered by twinning in films 25?nm thick, while recovery of the parameter never occurs in the thickness range that we explored (up to 432?nm). A relaxation, however, takes place above a thickness of 100?nm, associated with a transition from two-dimensional to three-dimensional columnar growth. It is accompanied by chemical fluctuations. Our magnetic measurements exhibit Curie temperatures and magnetic moments very close to the bulk values in those layers where the crystal parameter is strained but the angle partially relaxed.