Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements

Thermally stimulated current (TSC) measurements were carried out on as-grown n-Ga₄Se₃S layered crystals in the temperature range 10–300 K. The experimental data were analysed by using different heating rates, initial rise, curve fitting and isothermal decay methods. The results of the analysis showed good agreement with each other. The measurements revealed the presence of one trapping level with activation energy of 23 meV. The corresponding capture cross-section and concentration of traps were found to be 2.2 × 10^?23 cm² and 2.9 × 10¹¹ cm^?3, respectively. TSC experiments showed the presence of an exponential distribution of electron-trapping states in Ga₄Se₃S crystal. The variation of one order of magnitude in the trap density for every 34 meV was obtained.